LPCVD,
PECVD System for
Thin Film Deposition |
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Hot wall furnace type Low Pressure
Chemical Vapour Deposition systems with or without plasma enhancement
are designed and built for thin film layer deposition.
The LPCVD system is designed for depositing films on solid surfaces
by means of the reduced pressure chemical vapor deposition process,
taking place in a heated reaction chamber. The LPCVD technique allows
depositing solid films with excellent reproducibility and uniformity
with high throughput.
The standard configuration is a one or two tube system used in the
semiconductor industry for pilot production and research. The system
includes a furnace, gas control bay, vacuum section and a process
control computer. The stainless steel load door assembly is air
or water cooled . The gas system is built from ultra clean electropolished
316L stainless steel components and tubing. Standard components
are Mass Flow Controllers and bellow sealed, pneumatic operated
shut off valves. All gas lines are "point of use" filtered
and can be N2 purged. The pressure control is provided
with N2 purge in the vacuum line or with a butterfly
valve. The pressure measurement is made with specially calibrated
Pirani type sensor or with capacitance manometer. The pump capacity
is adjusted to the process requirement and can be increased from
30 to 250 m3/hr by using rotary vane pump or additional
Roots blower.
Plasma and/or ozone and/or light enhanced LPCVD process can lower
the reaction temperature required for deposition of thin films.
Application fields:
Thin film dielectrics (SiO2,
Si3N4, Al2O3, Ta2O3,
PSG, BPSG)
Thin film conductors (poly SI, amorphous
Si, W, Mo, TiSi)
Thin film layers with different optical
refractive index
Hard coatings for cutting tools (TiN,
Al2O3, SiC, WC)
Refractory coating and free standing
shapes
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